2N1167A
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2N1167A

SKU: 2N1167A
2N1167A Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Equivalent 2N1167
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 100
Vbr CEO 50
Max. hFE 65
Min hFE 15
Ic Max. (A) 25
@Ic (test) (A) 25
Icbo Max. @Vcb Max. (A) 15m
Polarity PNP
Derate Above 25°C 1.2
Trans. Freq (Hz) Min. 3.0k
Oper. Temp (°C) Max. 100#
@VCE (V) 1.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 106 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 75 V
Maximum Emitter-Base Voltage |Veb| 50 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 777190
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