2N1169

SKU: 2N1169

2N1169 Transistor Germanium PNP CASE: TO5 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	Generic
Min hFE	20
@Ic (test) (A)	200m
Icbo Max. @Vcb Max. (A)	10u
Mat.	Germanium
Polarity	PNP
Mat. Struct.	NPN
@VCE (V)	300m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	25 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	368061

Back