2N1175A

2N1175A

SKU: 2N1175A
2N1175A Transistor Germanium PNP CASE: TO5 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Motorola Semiconductor
Vbr CBO 35
Vbr CEO 25
Max. PD (W) 200m
C(ob) (F) 26p
Derate (Amb) (W/°C) 3.3m
hfe 80
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 12u
Polarity PNP
Trans. Freq (Hz) Min. 4.2M
@VCE (test) (V) 5.0i
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 777187
Back