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2N1176
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2N1176

SKU: 2N1176
2N1176 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 10
Vbr CEO 10
Max. PD (W) 300m
Derate (Amb) (W/°C) 5.0m
hfe 20
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 25u
Polarity PNP
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 85
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 70 pF
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 116204
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