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2N1176A
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2N1176A

SKU: 2N1176A
2N1176A Transistor Germanium PNP CASE: TO5 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Generic
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 300m
hfe 20
Ic Max. (A) 300m
Polarity PNP
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 100
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 90 pF
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 777185
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