2N1176B

SKU: 2N1176B

2N1176B Transistor Germanium PNP CASE: TO5 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	Generic
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	300m
hfe	20
Ic Max. (A)	300m
Polarity	PNP
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	100
@Ic (A)	10m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	0.3 A
Max. Operating Junction Temperature (Tj)	100 °C
Collector Capacitance (Cc)	90 pF
Transition Frequency (ft):	0.3 MHz
Forward Current Transfer Ratio (hFE), MIN	200
SKU	777184

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