2N1182

SKU: 2N1182

2N1182 Transistor Germanium PNP CASE: TO3 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Generic
Vbr CBO	50
Vbr CEO	60
Max. PD (W)	106
Max. hFE	85
Min hFE	30
Ic Max. (A)	5.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	12m
Polarity	PNP
Derate Above 25°C	1.2
Trans. Freq (Hz) Min.	5.0k
Oper. Temp (°C) Max.	100
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	106 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	0.05 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	605845

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