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2N1184B
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2N1184B

SKU: 2N1184B
2N1184B Transistor Germanium PNP CASE: TO8 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO8
Manufacturer Generic
Vbr CBO 80
Vbr CEO 40
Max. PD (W) 1.0
Max. hFE 120
Min hFE 40
Ic Max. (A) 3.0
@Ic (test) (A) 400m
Icbo Max. @Vcb Max. (A) 250u
Polarity PNP
Derate Above 25°C 100m
Trans. Freq (Hz) Min. 500k
Oper. Temp (°C) Max. 100
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 7.5 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 603512
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