2N1190

2N1190

SKU: 2N1190
2N1190 Transistor Germanium PNP CASE: TO5 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Generic
Vbr CBO 45
Vbr CEO 30
Max. PD (W) 200m
C(ob) (F) 25p
Derate (Amb) (W/°C) 2.6m
hfe 125
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 2.3M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 777174
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