2N1197

SKU: 2N1197

2N1197 Transistor Silicon PNP CASE: TO5 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO5
Manufacturer	USA Make
Vbr CBO	70
Vbr CEO	70
Max. PD (W)	350m
C(ob) (F)	4.0p
Derate (Amb) (W/°C)	2.0m
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	250n
Polarity	PNP
Oper. Temp (°C) Max.	200
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.35 W
Maximum Collector-Base Voltage \|Vcb\|	70 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	0.015 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	5 pF
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	5
SKU	777170

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