2N1201

SKU: 2N1201

2N1201 Transistor Silicon NPN CASE: TO9 MAKE: Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO5
Manufacturer	Philips
Vbr CBO	20
Vbr CEO	15
Max. PD (W)	100m
C(ob) (F)	3.5p
Derate (Amb) (W/°C)	769u
hfe	9.0
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	700n
Polarity	NPN
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	2.0m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	14 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	3.5 pF
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	7
SKU	561487

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