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2N1218
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2N1218

SKU: 2N1218
2N1218 Transistor Germanium NPN CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium NPN
Case TO3
Manufacturer USA Make
Vbr CBO 45
Vbr CEO 45
Max. PD (W) 20
Max. hFE 160
Min hFE 40
Ic Max. (A) 3.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 3.0m
Polarity NPN
Derate Above 25°C 270m
Oper. Temp (°C) Max. 100
@VCE (V) 1.5
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 0.07 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 605850
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