2N1223

2N1223

SKU: 2N1223
2N1223 Transistor Silicon PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer USA Make
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 250m
Derate (Amb) (W/°C) 1.7m
hfe 6.0
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 18 pF
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN 6
SKU 777148
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