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2N1227
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2N1227

SKU: 2N1227
2N1227 Transistor Germanium PNP CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer USA Make
Vbr CBO 35
Vbr CEO 20
Max. PD (W) 50
Max. hFE 350
Min hFE 50
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
Derate Above 25°C 710m
Oper. Temp (°C) Max. 95#
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 95 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 777146
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