The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1229
View detailed images (12)

2N1229

SKU: 2N1229
2N1229 Transistor Silicon PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer USA Make
Vbr CBO 15
Vbr CEO 15
Max. PD (W) 400m
C(ob) (F) 95p-
Derate (Amb) (W/°C) 3.0m
hfe 28
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 1.2M-
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 160
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 180 pF
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 777144
Back