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2N1230
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2N1230

SKU: 2N1230
2N1230 Transistor Silicon PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer USA Make
Vbr CBO 35
Vbr CEO 35
Max. PD (W) 400m
C(ob) (F) 95p-
Derate (Amb) (W/°C) 3.0m
hfe 14
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 1.2M-
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 160
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 35 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 180 pF
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 14
SKU 312649
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