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2N123A
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2N123A

SKU: 2N123A
2N123A Transistor Germanium PNP CASE: TO5 MAKE: Semiconductor Technology
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Semiconductor Technology
Vbr CBO 20
Vbr CEO 15
Max. PD (W) 150m
C(ob) (F) 15p
Derate (Amb) (W/°C) 8m
hfe 30
Icbo Max. @Vcb Max. (A) 6u
Polarity PNP
Trans. Freq (Hz) Min. 5.0M
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.125 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 24 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 75
SKU 573250
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