2N1260

SKU: 2N1260

2N1260 Transistor Silicon NPN CASE: TO53 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO53
Manufacturer	USA Make
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	85
Max. hFE	60
Min hFE	12
Ic Max. (A)	2.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	10m
Polarity	NPN
Derate Above 25°C	485m
Trans. Freq (Hz) Min.	50k
Oper. Temp (°C) Max.	175
@VCE (V)	15
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	85 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	95 °C
Transition Frequency (ft):	0.7 MHz
Forward Current Transfer Ratio (hFE), MIN	12
SKU	777120

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