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2N1261
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2N1261

SKU: 2N1261
2N1261 Transistor Germanium PNP CASE: MT36 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case MT36
Manufacturer USA Make
Vbr CBO 80
Vbr CEO 45
Max. PD (W) 10
Max. hFE 50
Min hFE 20
Ic Max. (A) 3.5
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
Trans. Freq (Hz) Min. 200k
Oper. Temp (°C) Max. 95
@VCE (V) 2.0
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 34 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 28 V
Maximum Collector Current |Ic max| 3.5 A
Max. Operating Junction Temperature (Tj) 95 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 777119
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