2N1261A
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2N1261A

SKU: 2N1261A
2N1261A Transistor Germanium PNP CASE: MT36 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case MT36
Manufacturer USA Make
Vbr CBO 80
Vbr CEO 45
Max. hFE 50
Min hFE 20
Ic Max. (A) 3.5
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
R(sat) (Û) .30
Derate Above 25°C 455m
Trans. Freq (Hz) Min. 200k
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 45 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 28 V
Maximum Collector Current |Ic max| 3.5 A
Max. Operating Junction Temperature (Tj) 95 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 777118
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