2N1262

SKU: 2N1262

2N1262 Transistor Germanium PNP CASE: MT36 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	MT36
Manufacturer	USA Make
Vbr CBO	80
Vbr CEO	45
Max. PD (W)	10
Max. hFE	75
Min hFE	30
Ic Max. (A)	3.5
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	PNP
Trans. Freq (Hz) Min.	200k
Oper. Temp (°C) Max.	95
@VCE (V)	2.0
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	34 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	45 V
Maximum Emitter-Base Voltage \|Veb\|	28 V
Maximum Collector Current \|Ic max\|	3.5 A
Max. Operating Junction Temperature (Tj)	95 °C
Transition Frequency (ft):	0.2 MHz
Forward Current Transfer Ratio (hFE), MIN	45
SKU	777117

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