2N1265

SKU: 2N1265

2N1265 Transistor Germanium PNP CASE: TO5 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	USA Make
Vbr CEO	10
Max. PD (W)	50m
hfe	25
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	100u+
Polarity	PNP
Trans. Freq (Hz) Min.	600k
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	85
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.1 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	10 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	85 °C
Collector Capacitance (Cc)	25 pF
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	777113

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