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2N1270
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2N1270

SKU: 2N1270
2N1270 Transistor Silicon NPN CASE: TO9 MAKE: Electronic Transistor
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Electronic Transistor
Vbr CBO 20
Vbr CEO 15
Max. PD (W) 150m
C(ob) (F) 3.5p
Derate (Amb) (W/°C) 1.2m
hfe 6.0
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 700n
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 3.5 pF
Forward Current Transfer Ratio (hFE), MIN 5
SKU 536221
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