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2N1280
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2N1280

SKU: 2N1280
2N1280 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 16
Vbr CEO 16
Max. PD (W) 200m
C(ob) (F) 20p
Derate (Amb) (W/°C) 3.3m
Ic Max. (A) 400m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 5.0M
Oper. Temp (°C) Max. 85
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 16 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 777093
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