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2N1293
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2N1293

SKU: 2N1293
2N1293 Transistor Germanium PNP CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 20
Min hFE 40
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.5m
Polarity PNP
Derate Above 25°C 333m
Oper. Temp (°C) Max. 85
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.05 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 777084
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