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2N1296
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2N1296

SKU: 2N1296
2N1296 Transistor Germanium NPN CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium NPN
Case TO3
Manufacturer USA Make
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 25
Min hFE 30
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 300u
Polarity NPN
Derate Above 25°C 333m
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 15 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 80 °C
Transition Frequency (ft): 0.15 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 777082
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