The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1301
View detailed images (12)

2N1301

SKU: 2N1301
2N1301 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 13
Vbr CEO 12
Max. PD (W) 150m
Derate (Amb) (W/°C) 2.5m
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 3.0u
Polarity PNP
Trans. Freq (Hz) Min. 35M
Oper. Temp (°C) Max. 85
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 13 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 85 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 368066
Back