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2N1314
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2N1314

SKU: 2N1314
2N1314 Transistor Germanium PNP CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer USA Make
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 13
Max. hFE 75
Min hFE 20
Ic Max. (A) 3.5
@Ic (test) (A) 30m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Derate Above 25°C 833m
Oper. Temp (°C) Max. 90
@VCE (V) 14
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector Current |Ic max| 3.5 A
Max. Operating Junction Temperature (Tj) 80 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 777071
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