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2N1358M
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2N1358M

SKU: 2N1358M
2N1358M Transistor Germanium PNP CASE: TO36 MAKE: Discrete Semiconductor Industries - DSI
Product specifications
Type Transistor Germanium PNP
Case TO36
Manufacturer Discrete Semiconductor Industries - DSI
Vbr CBO 80
Vbr CEO 40
Max. hFE 50
Min hFE 25
Ic Max. (A) 15
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 4.0m
Polarity PNP
Tr Max. (s) 15u
R(sat) (Û) .06
Derate Above 25°C 1.3
Trans. Freq (Hz) Min. 5.0k
Oper. Temp (°C) Max. 125
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Emitter-Base Voltage |Veb| 60 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 110 °C
Transition Frequency (ft): 0.08 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 777040
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