2N1365

SKU: 2N1365

2N1365 Transistor Germanium PNP CASE: TO3 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Motorola Semiconductor
Vbr CBO	120
Vbr CEO	100
Max. hFE	140
Min hFE	60
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	3.0m
Polarity	PNP
Derate Above 25°C	1.2
Trans. Freq (Hz) Min.	5.0k
Oper. Temp (°C) Max.	100
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	106 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	50 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	110 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	394093

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