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2N1412
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2N1412

SKU: 2N1412
2N1412 Transistor Germanium PNP CASE: TO23 MAKE: Generic
Product specifications
Equivalent 2N1412A
Type Transistor Germanium PNP
Case TO23
Manufacturer Generic
Vbr CBO 100
Vbr CEO 65
Max. PD (W) 87
Max. hFE 50
Min hFE 25
Ic Max. (A) 15
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 4.0m
Polarity PNP
R(sat) (Û) 50m
Derate Above 25°C 1.2
Trans. Freq (Hz) Min. 10k
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 60 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.05 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 776985
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