2N1469

SKU: 2N1469

2N1469 Transistor Germanium PNP CASE: TO5 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	USA Make
Vbr CBO	40
Vbr CEO	35
Max. PD (W)	250m
C(ob) (F)	7.0p-
Derate (Amb) (W/°C)	1.6m
hfe	36
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	25n
Polarity	PNP
Trans. Freq (Hz) Min.	2.0M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	175
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	75 °C
Collector Capacitance (Cc)	12 pF
Transition Frequency (ft):	2 MHz
Forward Current Transfer Ratio (hFE), MIN	36
SKU	368075

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