The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1506

2N1506

SKU: 2N1506
2N1506 Transistor Silicon NPN CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 20
Max. PD (W) 800m
C(ob) (F) 12p
Derate (Amb) (W/°C) 5.3m
hfe 2.0
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Trans. Freq (Hz) Min. 140M
@VCE (test) (V) 20
Oper. Temp (°C) Max. 175
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 776911
Back