2N1530A

SKU: 2N1530A

2N1530A Transistor Germanium PNP CASE: TO3 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Motorola Semiconductor
Vbr CBO	60
Vbr CEO	45
Max. hFE	40
Min hFE	20
Ic Max. (A)	5.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	PNP
Derate Above 25°C	1.3
Trans. Freq (Hz) Min.	5.0k
Oper. Temp (°C) Max.	100
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	106 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	30 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	110 °C
Transition Frequency (ft):	0.02 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	776899

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