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2N1613B
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2N1613B

SKU: 2N1613B
2N1613B Transistor Silicon NPN CASE: TO5 MAKE: Generic
Datasheet
2N1613B Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Central Semiconductor
Vbr CBO 120
Vbr CEO 50
Max. PD (W) 1.0
Max. hFE 120
Min hFE 40
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 200n
Polarity NPN
Derate Above 25°C 29m
Oper. Temp (°C) Max. 200
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 75 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 776812
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