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2N1616A
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2N1616A

SKU: 2N1616A
2N1616A Transistor Silicon NPN CASE: TO61 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer Generic
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 85
Max. hFE 60
Min hFE 20
Ic Max. (A) 7.5
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 200u
Polarity NPN
R(sat) (Û) 500m
Derate Above 25°C 425m
Oper. Temp (°C) Max. 200
@VCE (V) 4.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 85 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 776805
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