2N1617A

SKU: 2N1617A

2N1617A Transistor Silicon NPN CASE: TO61 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO61
Manufacturer	Generic
Vbr CBO	80
Vbr CEO	70
Max. PD (W)	85
Max. hFE	60
Min hFE	20
Ic Max. (A)	7.5
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	200u
Polarity	NPN
R(sat) (Û)	500m
Derate Above 25°C	425m
Oper. Temp (°C) Max.	200
@VCE (V)	4.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	85 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	70 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	776803

Back