2N1622

SKU: 2N1622

2N1622 Transistor Germanium NPN CASE: TO5 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	TO5
Manufacturer	USA Make
Vbr CBO	90
Vbr CEO	90
Max. PD (W)	120m
Derate (Amb) (W/°C)	2.0m
Icbo Max. @Vcb Max. (A)	7.0u
Polarity	NPN
Oper. Temp (°C) Max.	85
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.12 W
Maximum Collector-Base Voltage \|Vcb\|	90 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	75 °C
Transition Frequency (ft):	0.5 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	776794

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