2N1650

2N1650

SKU: 2N1650
2N1650 Transistor Silicon NPN CASE: MT11 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case MT11
Manufacturer USA Make
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 40
Min hFE 30
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 267m
Trans. Freq (Hz) Min. 2.0M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 368109
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