2N1651

2N1651

SKU: 2N1651
2N1651 Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 100
Max. hFE 140
Min hFE 35
Ic Max. (A) 25
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 300u
Polarity PNP
Derate Above 25°C 1.3
Oper. Temp (°C) Max. 110
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 106 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 110 °C
Transition Frequency (ft): 0.6 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 776771
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