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2N1658
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2N1658

SKU: 2N1658
2N1658 Transistor Germanium PNP CASE: MT9 MAKE: Solitron Devices
Product specifications
Type Transistor Germanium PNP
Case MT9
Manufacturer Solitron Devices
Vbr CBO 80
Vbr CEO 50
Max. PD (W) 15
Max. hFE 90
Min hFE 30
Ic Max. (A) 1.0
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 500u
Polarity PNP
Tr Max. (s) 5.0u
R(sat) (Û) 250m
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 500k
Oper. Temp (°C) Max. 100
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 85 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 40 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 776764
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