2N1659

SKU: 2N1659

2N1659 Transistor Germanium PNP CASE: MT9 MAKE: Solitron Devices

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	MT9
Manufacturer	Solitron Devices
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	15
Max. hFE	90
Min hFE	30
Ic Max. (A)	1.0
@Ic (test) (A)	200m
Icbo Max. @Vcb Max. (A)	500u
Polarity	PNP
Tr Max. (s)	5.0u
R(sat) (Û)	250m
Derate Above 25°C	200m
Trans. Freq (Hz) Min.	500k
Oper. Temp (°C) Max.	100
@VCE (V)	2.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	85 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	40 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	20 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	776761

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