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2N1665
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2N1665

SKU: 2N1665
2N1665 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 15
Vbr CEO 12
Max. PD (W) 150m
C(ob) (F) 3.0p
Derate (Amb) (W/°C) 2.5m
hfe 3.0
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 85
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 5
SKU 776752
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