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2N1666
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2N1666

SKU: 2N1666
2N1666 Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 30
t(f) Max. (S) 50u
Max. hFE 30
Min hFE 15
Ic Max. (A) 8.0
@Ic (test) (A) 6.0
Icbo Max. @Vcb Max. (A) 5.0m
Polarity PNP
Tr Max. (s) 30u
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 2.0k
Oper. Temp (°C) Max. 90
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 32 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 368110
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