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2N1667
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2N1667

SKU: 2N1667
2N1667 Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 60
Vbr CEO 48
Max. PD (W) 30
Max. hFE 80
Min hFE 35
Ic Max. (A) 6.0
@Ic (test) (A) 6.0
Icbo Max. @Vcb Max. (A) 5.0m
Polarity PNP
Tr Max. (s) 30u
Derate Above 25°C 670m
Oper. Temp (°C) Max. 90#
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 32 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 776751
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