2N1669

SKU: 2N1669

2N1669 Transistor Germanium PNP CASE: TO3 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Generic
Vbr CBO	80
Vbr CEO	60
Max. PD (W)	30
Max. hFE	65
Min hFE	20
Ic Max. (A)	6.0
@Ic (test) (A)	6.0
Icbo Max. @Vcb Max. (A)	30m
Polarity	PNP
Tr Max. (s)	30u
Derate Above 25°C	670m
Oper. Temp (°C) Max.	90#
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	32 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	90 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	776750

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