2N1670

SKU: 2N1670

2N1670 Transistor Germanium PNP CASE: TO9 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	USA Make
Vbr CBO	100
Max. PD (W)	120m
C(ob) (F)	5.0p
Derate (Amb) (W/°C)	2.0m
Icbo Max. @Vcb Max. (A)	7.0u
Polarity	PNP
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	85
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.12 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	75 °C
Collector Capacitance (Cc)	10 pF
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	776748

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