The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N1709
View detailed images (12)

2N1709

SKU: 2N1709
2N1709 Transistor Silicon NPN CASE: TO8 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO8
Manufacturer USA Make
Vbr CBO 75
Vbr CEO 30
Max. PD (W) 2.0
Max. hFE 75
Min hFE 7.5
Ic Max. (A) 2.0
@Ic (test) (A) 350m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
R(sat) (Û) 5.0
Derate Above 25°C 87m
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 175
@VCE (V) 28
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 8
SKU 776723
Back