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2N1710
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2N1710

SKU: 2N1710
2N1710 Transistor Silicon NPN CASE: TO8 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO8
Manufacturer USA Make
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 2.0
Max. hFE 100
Min hFE 4.0
Ic Max. (A) 2.0
@Ic (test) (A) 350m
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
R(sat) (Û) 5.0
Derate Above 25°C 87m
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 175
@VCE (V) 28
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 8
SKU 776722
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