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2N1711B
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2N1711B

SKU: 2N1711B
2N1711B Transistor Silicon NPN CASE: TO5 MAKE: Generic
Datasheet
2N1711B Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Central Semiconductor
Vbr CBO 120
Vbr CEO 50
Max. PD (W) 1.0
Min hFE 20
Ic Max. (A) 2.0
@Ic (test) (A) 100u
Icbo Max. @Vcb Max. (A) 2.0n
Polarity NPN
R(sat) (Û) 1.3
Derate Above 25°C 28m
Trans. Freq (Hz) Min. 70M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 312719
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